INFORSIGHT COMPUTING

Due to the superior material properties such as high breakdown voltage, high saturation velocity, and high thermal conductivity, III-nitride devices are expected to offer better high frequency, high power, and high temperature performance compared to conventional Si and GaAs devices. The AlGaN/GaN high electron mobility transistor (HEMT) is one of the most promising devices because of its modulation-doped structure and a significantly larger polarization field induced at the hetero-interface. Recent progress in growth and process technology has already led to very impressive results for AlGaN/GaN HEMTs. A transconductance as high as 270 mS/mm has been achieved in devices with 0.7 μm gate length [1]. AlGaN/GaN HEMTs grown on a SiC substrate with a power density as high as 9.8 W/mm at 8 GHz have also been demonstrated, which is about ten times higher than GaAs-based FETs [2], and current gain cutoff frequencies of 101 GHz have been reported [3]. Recent studies show that there is about a..

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