GAAS

GaAs is a material with a direct energy band gap, and the absorption effect of light is quite good. When the photon energy is larger than the bandgap of GaAs, the absorption coefficient of the material for light is about 104cm-1. Figure 1 shows the light absorption coefficients of semiconductor materials such as Si, GaAs and InP for different wavelengths, so the thickness of the GaAs solar cell structure is only about 4µm. The high absorption rate of light by the direct energy gap material is an advantage. But other problems arise when making solar cells... (1) GaAs:GaAs is a material with a direct energy band gap. At room temperature, the lattice constant of GaAs is 5.6532, and the energy band gap is 1.424 eV. The energy band gap is theoretically suitable for making single-junction solar energy. Battery. The application of GaAs wafers is also quite common and is often used to manufacture various optoelectronic devices... (5) The GaAs substrate is cheaper than InP, and at the same..