RANDY W. MANN

After receiving his Masters degree in Metallurgical Engineering and Material Science in 1982 from Notre Dame University, Randy joined the IBM technology development team in Essex Junction, VT. He worked for 25 years in the advanced silicon technology development group with IBM. Randy has over over 100 US patents, more than 50 publications with over 4000 citations to his work, in the field of microelectronic devices, structures, and circuits. His expertise includes FEOL processes, semiconductor devices, materials, yield learning, high performance logic, Iddq analysis, DRAM and SRAM technologies. His research interests include statistics of rare events, fail probabilities in advanced SRAM and innovations in SRAM design. He played a key role in the early development of self aligned silicides for VLSI technologies and in developing what is now commonly known as high density SRAM bit cell designs. Randy obtained his doctorate in Electrical Engineering from the University of Virginia in 2010..