NANOLAB

Updated 634 days ago
  • ID: 49873160/8
Academic Area Indian Institute of Technology Kanpur, 208016 Uttar Pradesh, India
The ASM-HEMT model, a robust surface-potential based compact model for Gallium Nitride (GaN) High Electron Mobility Transistors, was developed as a joint effort between Indian Institute of Technology Kanpur and Macquarie University. The model was standardized following more than 5 years of rigorous research by teams at Indian Institute of Technology Kanpur (under Prof. Yogesh Singh Chauhan) and Macquarie University (under Prof. Sourabh Khandelwal). In January 2018, it was selected for funding as an industry standard by Silicon Integration Initiative's Compact Model Coalition (CMC) - a conglomerate of key industry players encompassing the entire semiconductor industry supply chain - all the way from EDA tool developers to foundries.
Primary location: Kanpur India
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Interest Score
2
HIT Score
0.00
Domain
asmgan.org

Actual
iitk.ac.in

IP
3.33.152.147, 15.197.142.173

Status
OK

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Company
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